| US 7,463,516 B2 | ||
| Flash memories with adaptive reference voltages | ||
| Amir Ban, Ramat Hasharon (Israel) | ||
| Assigned to SanDisk IL, Ltd, Kfar Saba, Ill. (US) | ||
| Filed on Oct. 25, 2007, as Appl. No. 11/923,677. | ||
| Application 11/923677 is a continuation of application No. 10/867645, filed on Jun. 16, 2004, granted, now 7,372,731. | ||
| Claims priority of provisional application 60/479895, filed on Jun. 17, 2003. | ||
| Prior Publication US 2008/0094907 A1, Apr. 24, 2008 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.03 [365/185.24; 365/185.2] | 10 Claims |
| 1. A method of reading a plurality of flash memory cells, comprising the steps of:
(a) providing at least one integral reference voltage and at least one fractional reference voltage;
(b) comparing a threshold voltage of each cell of the plurality to said at least one integral reference voltage and to said
at least one fractional reference voltage to determine at least one statistic of said threshold voltages for the plurality
of flash memory cells; and
(c) adjusting at least one said reference voltage in accordance with said at least one statistic.
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