an ESD device, wherein the ESD device includes a source, a gate and a drain;

a junction isolation diode coupled between the drain of the ESD device and a ground potential for providing junction isolation of the drain; and

an isolation diode element coupled in series with the ESD device and configured for providing ESD protection to a transistor device needing ESD protection having a source, a gate and a drain, wherein (i) responsive to −Vgs conditions on a gate of the protected transistor device, the series coupled isolation diode element prevents a forward biasing of the drain-source junction of the ESD transistor prior to a breakdown condition of the isolation diode element, (ii) responsive to an ESD event sufficient to cause damage to the transistor device needing ESD protection, the series coupled isolation diode element permits an occurrence of the breakdown condition, further wherein the ESD protection circuit can operate in both (i) a polarity of normal operation of the protected device and (ii) an opposite polarity other than in normal operation of the transistor device needing ESD protection; and (iii) the source of the transistor device needing ESD protection is connected to the source of the ESD device by a back side of a substrate of the ESD protection circuit, the substrate comprising an SOI substrate and an isolation region that is bounded by (i) trench isolation and (ii) an insulator layer of the SOI substrate, the isolation diode element comprising a diode element isolated from the substrate by the isolation region in the substrate between the ESD device and the transistor device needing ESD protection.