| US 7,592,259 B2 | ||
| Methods and systems for barrier layer surface passivation | ||
| Yezdi Dordi, Palo Alto, Calif. (US); John Boyd, Hillsboro, Oreg. (US); Fritz Redeker, Fremont, Calif. (US); William Thie, Mountain View, Calif. (US); Tiruchirapalli Arunagiri, Fremont, Calif. (US); and Alex Yoon, San Jose, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Dec. 18, 2006, as Appl. No. 11/641,364. | ||
| Prior Publication US 2008/0146025 A1, Jun. 19, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—687 [438/650; 257/E21.585; 257/E21.584; 257/E21.575] | 24 Claims |
| 1. A method of depositing a gapfill copper layer onto a transition metal barrier layer or transition metal compound barrier
layer for integrated circuit metallization so as to produce a substantially oxygen-free interface there between, the method
comprising:
(a) forming the barrier layer on a surface of a substrate;
(b) forming a removable passivated surface comprising ruthenium on the barrier layer;
(c) removing the removable passivated surface from the barrier layer; and
(d) depositing the gapfill copper layer onto the barrier layer.
|