	US 7,585,791 B2
	Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device
Koichiro Tanaka, Isehara (Japan); and Yoshiaki Yamamoto, Hadano (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa (Japan)
Appl. No. 10/584,729 PCT Filed Oct. 18, 2005, PCT No. PCT/JP2005/019456 § 371(c)(1), (2), (4) Date Jun. 23, 2006, PCT Pub. No. WO2006/043690, PCT Pub. Date Apr. 27, 2006.
Claims priority of application No. 2004-306140 (JP), filed on Oct. 20, 2004.
Prior Publication US 2007/0178672 A1, Aug. 02, 2007
Int. Cl. H01L 21/00 (2006.01); C30B 13/00 (2006.01)

U.S. Cl. 438—795 [438/799; 438/487; 257/E21.473; 257/E21.475; 117/219]

34 Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

emitting a laser beam which is a fundamental wave from a laser oscillator;

delivering the laser beam onto the semiconductor layer;

crystallizing the semiconductor layer by irradiating with the laser beam which generates multiphoton absorption while moving the surface of the semiconductor layer relatively to the laser beam;

forming an insulating layer over the crystallized semiconductor layer;

forming a conductive layer over the crystallized semiconductor layer with the insulating layer interposed therebetween.