| US 7,585,783 B2 | ||
| Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device | ||
| Osamu Nakamura, Kanagawa (Japan); and Shunpei Yamazaki, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Apr. 20, 2004, as Appl. No. 10/827,710. | ||
| Claims priority of application No. 2003-121638 (JP), filed on Apr. 25, 2003. | ||
| Prior Publication US 2006/0158482 A1, Jul. 20, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—758 [438/761; 438/763; 257/E21.476] | 26 Claims |
| 1. A method for manufacturing a semiconductor device comprising:
irradiating a substrate to be processed with a laser beam to form a groove in said substrate to be processed;
discharging a drop from discharge means and landing the drop on said groove;
evaporating a solvent of said drop;
irradiating a solute of said drop with a laser beam to recrystallize, to form a gate electrode;
forming a gate insulating film over the gate electrode; and
forming a semiconductor film over the gate insulating film,
wherein a width of said groove is wider than a diameter of said drop before landing on said groove, and
wherein said groove is for accommodating said drop after it has landed in an inside of said groove.
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