US 7,585,751 B2
Wafer dividing method using laser beam with an annular spot
Naotoshi Kirihara, Ota-Ku (Japan); Koji Yamaguchi, Ota-ku (Japan); and Yukio Morishige, Ota-ku (Japan)
Assigned to Disco Corporation, Tokyo (Japan)
Filed on Jun. 17, 2008, as Appl. No. 12/140,914.
Claims priority of application No. 2007-184160 (JP), filed on Jul. 13, 2007.
Prior Publication US 2009/0017600 A1, Jan. 15, 2009
Int. Cl. H01L 21/304 (2006.01)
U.S. Cl. 438—462  [438/463; 257/E21.238] 1 Claim
OG exemplary drawing
 
1. A wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method comprising:
a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and
a cutting step for allowing the cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.