| US 7,585,714 B2 | ||
| Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus | ||
| Shunpei Yamazaki, Tokyo (Japan); Osamu Nakamura, Kanagawa (Japan); and Hironobu Shoji, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Dec. 13, 2006, as Appl. No. 11/637,914. | ||
| Application 11/637914 is a division of application No. 10/701174, filed on Nov. 05, 2003, granted, now 7,160,762. | ||
| Claims priority of application No. 2002-325340 (JP), filed on Nov. 08, 2002; and application No. 2002-325357 (JP), filed on Nov. 08, 2002. | ||
| Prior Publication US 2007/0099440 A1, May 03, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—164 [438/181; 438/308; 438/795; 257/66; 257/72; 257/E51.005; 257/E33.001] | 40 Claims |
| 1. A method for manufacturing a semiconductor device comprising:
crystallizing a semiconductor including a first noble gas by irradiating the semiconductor with a laser light in an atmosphere
of second noble gas; and
forming a gate electrode over a crystallized semiconductor with a gate insulating film interposed therebetween,
wherein a magnetic field is applied to the semiconductor when the semiconductor is irradiated with the laser light.
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