| US 7,579,774 B2 | ||
| Light emitting device and method for fabricating light emitting device | ||
| Shunpei Yamazaki, Tokyo (Japan); Ritsuko Nagao, Kanagawa (Japan); and Yasuo Nakamura, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on May 08, 2007, as Appl. No. 11/745,541. | ||
| Application 11/745541 is a division of application No. 10/867581, filed on Jun. 15, 2004, granted, now 7,221,095. | ||
| Claims priority of application No. 2003-171366 (JP), filed on Jun. 16, 2003; and application No. 2003-183796 (JP), filed on Jun. 27, 2003. | ||
| Prior Publication US 2007/0205718 A1, Sep. 06, 2007 | ||
| Int. Cl. H01J 1/62 (2006.01) | ||
| U.S. Cl. 313—505 [313/506] | 50 Claims |
| 1. A light emitting device comprising:
a first insulating film;
a first electrode over the first insulating film;
an auxiliary electrode over the first insulating film;
a second insulating film having a first opening and a second opening over the first insulating film;
an electroluminescent layer formed over the second insulating film so as to cover the first and the second openings; and
a second electrode in contact with the electroluminescent layer,
wherein the electroluminescent layer is in contact with the first electrode in the first opening, and
wherein the electroluminescent layer is in contact with a top surface of the auxiliary electrode and the second electrode
is in contact with a side surface of the auxiliary electrode in the second opening.
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