| US 7,579,634 B2 | ||
| Semiconductor device including a field effect transistor | ||
| Koji Onodera, Kanagawa (Japan); Mitsuhiro Nakamura, Kanagawa (Japan); and Tomoya Nishida, Kagoshima (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jan. 12, 2006, as Appl. No. 11/331,292. | ||
| Claims priority of application No. P2005-008551 (JP), filed on Jan. 17, 2005. | ||
| Prior Publication US 2006/0157734 A1, Jul. 20, 2006 | ||
| Int. Cl. H01L 29/20 (2006.01) | ||
| U.S. Cl. 257—192 [257/E21.371] | 14 Claims |
| 1. A semiconductor device comprising:
a device formation region;
a substrate including a field effect transistor, the field effect transistor including a heterojunction, a gate electrode,
a source electrode, and a drain electrode, said field effect transistor formed in the device formation region;
a device separation region formed on a semiconductor substrate and spaced apart from the source electrode and drain electrode,
wherein said device separation region includes a layer with a conductive impurity introduced therein, wherein the device separation
region electrically isolates the device formation region upon which the field effect transistor is formed; and
a substrate voltage applying electrode formed on a surface of at least a part of said device separation region and continuously
surrounding a plurality of sides of said field effect transistor, the substrate voltage applying electrode spaced apart from
and electrically separated from the source electrode and the drain electrode.
|