| US 7,579,231 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Kouji Matsuo, Yokohama (Japan); Tomohiro Saito, Yokohama (Japan); Kyoichi Suguro, Yokohama (Japan); and Shinichi Nakamura, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Kawasaki-shi (Japan) | ||
| Filed on Apr. 02, 2004, as Appl. No. 10/815,932. | ||
| Application 10/815932 is a division of application No. 09/492780, filed on Jan. 28, 2000, granted, now 6,737,716. | ||
| Claims priority of application No. 11-022688 (JP), filed on Jan. 29, 1999; application No. 11-041343 (JP), filed on Feb. 19, 1999; and application No. 11-267207 (JP), filed on Sep. 21, 1999. | ||
| Prior Publication US 2004/0183142 A1, Sep. 23, 2004 | ||
| Int. Cl. H01L 21/8238 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 23/62 (2006.01) | ||
| U.S. Cl. 438—216 [438/585; 438/592; 438/630; 438/657; 257/406] | 12 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
forming a first insulating film, selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,
on a semiconductor substrate;
forming a metal compound film on the first insulating film;
forming a second insulating film comprising a metal oxide film or a metal silicate film by oxidizing said metal compound film;
and
forming an electrode on said second insulating film,
wherein said metal compound film does not contain tungsten.
|