| US 7,579,228 B2 | ||
| Disposable organic spacers | ||
| Paul A. Grudowski, Austin, Tex. (US); Kurt H. Junker, Austin, Tex. (US); Thomas J. Kropewnicki, Austin, Tex. (US); and Andrew G. Nagy, Austin, Tex. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on Jul. 10, 2007, as Appl. No. 11/825,953. | ||
| Prior Publication US 2009/0017587 A1, Jan. 15, 2009 | ||
| Int. Cl. H01L 21/8238 (2006.01) | ||
| U.S. Cl. 438—199 [438/514; 438/595; 438/710; 438/780; 438/943; 257/E27.064; 257/E27.108; 257/E21.632] | 20 Claims |
| 1. A method for making a semiconductor device, comprising:
providing a semiconductor structure comprising a first gate electrode disposed in a first region and a second gate electrode
disposed in a second region;
forming a first set of organic spacers adjacent to said first electrode through a process which includes (a) depositing a
first layer comprising a first organic material having a first average thickness, and (b) etching the first layer with a first
etch;
depositing a first photo mask over the structure such that at least a portion of the first region is exposed and at least
a portion of the second region is covered;
subjecting the first region to a first implantation process;
concurrently removing the first set of organic spacers and the first photo mask;
forming a second set of organic spacers adjacent to said second electrode through a process which includes (a) depositing
a second layer comprising a second organic material having a second average thickness, and (b) etching the second layer with
a second etch;
depositing a second photo mask over the structure such that at least a portion of the second region is exposed and at least
a portion of the first region is covered;
subjecting the second region to a second implantation process; and
concurrently removing the second set of organic spacers and the second photo mask.
|