| US 7,578,896 B2 | ||
| Production method of multilayer ceramic electronic device | ||
| Takako Hibi, Tokyo (Japan); Yukie Nakano, Tokyo (Japan); Shunichi Yuri, Tokyo (Japan); Takahiro Ushijima, Tokyo (Japan); Akira Sato, Tokyo (Japan); Wataru Takahara, Tokyo (Japan); and Masako Yoshii, Akita-ken (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Aug. 29, 2007, as Appl. No. 11/896,060. | ||
| Application 11/896060 is a continuation of application No. 10/296993, granted, now 7,276,130, previously published as PCT/JP02/03657, filed on Apr. 12, 2002. | ||
| Claims priority of application No. 2001-113425 (JP), filed on Apr. 12, 2001; and application No. 2001-131712 (JP), filed on Apr. 27, 2001. | ||
| Prior Publication US 2008/0006365 A1, Jan. 10, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C03B 29/00 (2006.01); H01G 4/06 (2006.01); H01C 7/12 (2006.01); C04B 35/00 (2006.01) | ||
| U.S. Cl. 156—89.12 [156/89.14; 361/321.1; 361/321.2; 361/118; 501/139] | 8 Claims |
| 1. A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body
wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged,characterized in that:
said firing step has a temperature raising step for raising a temperature to a firing temperature;
hydrogen is continued to be introduced from a point in time of said temperature raising step, wherein a temperature for initially
introducing said hydrogen is 1000° C. or more; and
said dielectric layer has a main component containing BaTiO3.
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