| US 7,573,926 B2 | ||
| Multiwavelength quantum dot laser element | ||
| Kuo-Jui Lin, Hsinchu (Taiwan); Kun-Fong Lin, Hsinchu (Taiwan); and Chih-Ming Lai, Hsinchu (Taiwan) | ||
| Assigned to Industrial Technology Research Institute, Hsinchu (Taiwan) | ||
| Filed on May 17, 2007, as Appl. No. 11/798,864. | ||
| Claims priority of application No. 96100995 A (TW), filed on Jan. 10, 2007. | ||
| Prior Publication US 2008/0165819 A1, Jul. 10, 2008 | ||
| Int. Cl. H01S 3/00 (2006.01); H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—44.01 [372/38.02] | 14 Claims |
| 1. A multiwavelength quantum dot laser element, comprising:
a first semiconductor layer;
a second semiconductor layer; and
an active region, disposed between the first semiconductor layer and the second semiconductor layer, having a plurality of
quantum dot active regions, each of the quantum dot active regions comprising a quantum dot layer and a covering layer that
covers the quantum dot layer,
wherein when an applied current is larger than a start-oscillation current, the quantum dot active regions simultaneously
generate a plurality of laser lights with different wavelengths,
wherein at least one different parameter condition exist between the quantum dot active regions,
wherein the parameter condition comprises one of thickness, material composition, and quantum dot size of the quantum dot
layers, and any combination thereof, and
wherein the parameter condition further comprises one of thickness of the covering layers, material composition of the covering
layers, and a combination thereof.
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