| US 7,573,102 B2 | ||
| ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad | ||
| Meng-Huang Liu, Hsinchu (Taiwan); Chun-Hsiang Lai, Taichung (Taiwan); Shin Su, Banchiau (Taiwan); Yen-Hung Yeh, Yangmei Township, Taoyuan County (Taiwan); Chia-Ling Lu, Lujhou (Taiwan); and Tao-Cheng Lu, Koahsiung (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Aug. 01, 2006, as Appl. No. 11/496,490. | ||
| Prior Publication US 2006/0273399 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 29/72 (2006.01) | ||
| U.S. Cl. 257—355 [257/360; 361/56; 361/11] | 8 Claims |
| 1. An electrostatic discharge (ESD) protection method for an integrated circuit, the method comprising the steps of:
connecting an ESD protection device between a pad and a ground of the integrated circuit;
arrangingconnecting a substrate-triggering control circuit including an active device connected between the pad and a substrate
of the integrated circuit, whereby the active device is off during a normal operation of the integrated circuit, so a potential
of the substrate stays at a low level, thereby keeping the ESD protection device off during the normal operation;
turning the active device off during a normal operation for keeping the substrate at a low voltage; and
turning the active device on during an ESD event for pumping the substrate to a high voltage;
upon the occurrence of an ESD event of the integrated circuit, turning on the active device, thereby increasing the potential
of the substrate to a high level; and
when the potential of the substrate reaches the high level, releasing electrostatic charge of the integrated circuit by turning
on the ESD protection device.
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