| US 7,573,086 B2 | ||
| TaN integrated circuit (IC) capacitor | ||
| Michael LeRoy Huber, Sachse, Tex. (US); Gregory Lee Hendy, Murphy, Tex. (US); Evelyn Anne Lafferty, Frisco, Tex. (US); George Nicholas Harakas, Garland, Tex. (US); Salvatore Frank Pavone, Murphy, Tex. (US); Blake Ryan Pasker, Wylie, Tex. (US); Courtney Michael Hazelton, Dallas, Tex. (US); and James Wayne Klawinsky, Irving, Tex. (US) | ||
| Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
| Filed on Aug. 26, 2005, as Appl. No. 11/212,455. | ||
| Prior Publication US 2007/0045774 A1, Mar. 01, 2007 | ||
| Int. Cl. H01L 29/94 (2006.01) | ||
| U.S. Cl. 257—306 [257/532; 257/535; 257/E21.396; 438/437; 427/79] | 19 Claims |
| 1. A semiconductor structure having a cross section comprising:
a dielectric layer within a semiconductor substrate; and
a TaN capacitor having a portion overlying the dielectric layer and comprising:
a bottom conductive plate on the dielectric layer and electrically isolated from the semiconductor substrate by the dielectric
layer;
a capacitor dielectric located in contact with the bottom conductive plate, wherein the capacitor dielectric comprises a poly
metal dielectric (PMD) nitride liner; and
a top conductive plate located in contact with the capacitor dielectric, where the top conductive plate comprises TaN and
excludes copper, and where at least a portion of the capacitor is formed on the semiconductor substrate.
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