| US 7,572,737 B1 | ||
| Apparatus and methods for adjusting an edge ring potential substrate processing | ||
| Rajinder Dhindsa, San Jose, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Jun. 30, 2006, as Appl. No. 11/428,155. | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—714 [216/68; 156/345] | 30 Claims |
| 1. A method for processing a substrate in a plasma processing chamber, said substrate being disposed above a chuck and surrounded
by an edge ring, said edge ring being electrically isolated from said chuck, said method comprising:
providing RF power to said chuck;
coupling an edge ring DC voltage control arrangement to said edge ring to provide first voltage to said edge ring, resulting
in said edge ring having an edge ring potential;
generating a plasma within said plasma processing chamber to process said substrate; and
adjusting said edge ring DC voltage control arrangement to cause said plasma to have a non-uniform angular ion distribution
profile for processing an edge of said substrate, wherein said adjusting causes said edge ring potential to be higher than
a DC potential of said substrate.
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