applying a structured etch mask having a plurality of holes on a semiconductor substrate;

creating depressions beneath the holes via an etch process;

forming, via anodization, an area rendered porous beneath at least one of the depressions in the semiconductor substrate and a lattice-like structure, made of a substrate material that has not been rendered porous, on a surface of the semiconductor substrate between the depressions;

removing the etch mask; and

creating the hollow space out of the area rendered porous and the membrane above the hollow space out of the lattice-like structure via one of a temperature treatment and an electro polishing of the semiconductor substrate;

wherein the semiconductor substrate has the same doping concentration in both the area rendered porous and the lattice-like structure, and

wherein a formation of the area rendered porous beneath and a formation of the lattice-like structure are doping-independent.