| US 7,571,698 B2 | ||
| Low-frequency bias power in HDP-CVD processes | ||
| Rongping Wang, Cupertino, Calif. (US); Canfeng Lai, Fremont, Calif. (US); Yuri Trachuk, San Jose, Calif. (US); and Siamak Salimian, Sunnyvale, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jan. 10, 2005, as Appl. No. 11/34,515. | ||
| Prior Publication US 2006/0150913 A1, Jul. 13, 2006 | ||
| Int. Cl. C23C 16/00 (2006.01); C23C 14/00 (2006.01) | ||
| U.S. Cl. 118—723R [118/728; 118/723 E; 204/298.06; 204/298.03; 204/298.15; 427/8] | 14 Claims |
| 1. A substrate processing system comprising:
a housing defining a process chamber;
a substrate holder disposed within the process chamber and configured to support a substrate during substrate processing;
a gas-delivery system configured to introduce a gas into the process chamber;
a pressure-control system for maintaining a selected pressure within the process chamber;
a high-density plasma generating system operatively coupled with the process chamber for forming a plasma having a density
greater than 1011 ions/cm3 within the process chamber;
a radio-frequency bias system electrically coupled with the substrate holder to generate an electrical bias on the substrate
at a frequency less than 5 MHz, wherein the radio-frequency bias system comprises a radio-frequency generator electrically
coupled with an impedance matching network; and
a controller for controlling the gas-delivery system, the pressure-control system, the high-density plasma generating system,
and the radio-frequency bias system, the controller having instructions to operate the radio-frequency generator to electronically
sweep through a frequency range to determine the frequency that minimizes a power reflected from the process chamber.
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