| US 7,551,510 B2 | ||
| Memory block reallocation in a flash memory device | ||
| Jin-Man Han, Santa Clara, Calif. (US); and Aaron Yip, Santa Clara, Calif. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Dec. 07, 2006, as Appl. No. 11/635,708. | ||
| Application 11/635708 is a division of application No. 11/116597, filed on Apr. 28, 2005, granted, now 7,400,549. | ||
| Prior Publication US 2007/0081411 A1, Apr. 12, 2007 | ||
| Int. Cl. G11C 8/00 (2006.01) | ||
| U.S. Cl. 365—230.03 [365/189.02; 365/235; 365/238.5] | 25 Claims |
| 1. A memory device comprising a plurality of memory blocks that includes a predetermined memory block having a plurality of
pages to be reallocated, the device comprising:
a plurality of wordline drivers each coupled to a different one of the plurality of memory blocks; and
a plurality of global wordlines coupled to each wordline driver such that a subset of the plurality of global wordlines is
coupled to wordline drivers that are coupled to each of the memory blocks comprising at least one of the plurality of pages
to be reallocated, the subset being less than the plurality of global wordlines.
|