| US 7,550,779 B2 | ||
| Light emitting device with filled tetrahedral (FT) semiconductor in the active layer | ||
| Kazushige Yamamoto, Yokohama (Japan); Tatsuo Shimizu, Tokyo (Japan); and Shigeru Haneda, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 09, 2008, as Appl. No. 12/207,178. | ||
| Application 12/207178 is a division of application No. 11/533149, filed on Sep. 19, 2006, granted, now 7,446,348. | ||
| Claims priority of application No. 2005-346601 (JP), filed on Nov. 30, 2005. | ||
| Prior Publication US 2009/0008653 A1, Jan. 08, 2009 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—103 [257/102; 257/E33.013] | 15 Claims |
| 1. A light emitting device, comprising:
an active layer comprising atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for
the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D,
the heteroatom D having a valence electron number differing by −1 from that of the atom A, and the heteroatom Z having an
electron configuration of a closed shell structure through charge compensation with the heteroatom D; and
an n-electrode and a p-electrode adapted to supply a current to the active layer.
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