US 7,550,735 B2
	GaTe semiconductor for radiation detection
Stephen A. Payne, Castro Valley, Calif. (US); Arnold Burger, Nashville, Tenn. (US); and Krishna C. Mandal, Ashland, Mass. (US)
Assigned to Lawrence Livermore National Security, LLC, Livermore, Calif. (US)
Filed on Jun. 29, 2007, as Appl. No. 11/824,094.
Prior Publication US 2009/0001277 A1, Jan. 01, 2009
Int. Cl. G01T 1/24 (2006.01); H01L 27/146 (2006.01)

U.S. Cl. 250—370.12  [250/370.09]

34 Claims

1. A gamma radiation detector comprising a single crystal of GaTe semiconductor as a medium to detect a high-energy ionization event.