| US 7,550,395 B2 | ||
| Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte | ||
| Evelyn L. Hu, Goleta, Calif. (US); Shuji Nakamura, Santa Barbara, Calif. (US); Elaine D. Haberer, Santa Barbara, Calif. (US); and Rajat Sharma, Goleta, Calif. (US) | ||
| Assigned to The Regents of the University of California, Oakland, Calif. (US) | ||
| Filed on Oct. 31, 2005, as Appl. No. 11/263,314. | ||
| Claims priority of provisional application 60/624308, filed on Nov. 02, 2004. | ||
| Prior Publication US 2006/0110926 A1, May 25, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01); H01L 21/461 (2006.01) | ||
| U.S. Cl. 438—746 [257/E21.215] | 8 Claims |
| 1. A method for fabricating a III-nitride semiconductor structure comprising:
modifying an electrochemical potential of material in the semiconductor structure relative to an electrolyte to perform a
selective photo-induced etch of the material, by:
(1) impeding extraction of photo-generated electrons from the material to inhibit etching of the material, or
(2) collecting photo-generated electrons from the material to promote etching of the material.
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