| US 7,550,385 B2 | ||
| Amine-free deposition of metal-nitride films | ||
| Adrien R. Lavoie, St. Helens, Oreg. (US); Valery M. Dubin, Portland, Oreg. (US); Juan E. Dominguez, Hillsboro, Oreg. (US); Kevin P. O'Brien, Portland, Oreg. (US); Steven W. Johnston, Portland, Oreg. (US); John D. Peck, West Seneca, N.Y. (US); David M. Thompson, East Amherst, N.Y. (US); and David W. Peters, Tonawanda, N.Y. (US) | ||
| Assigned to Intel Corporation, Santaclara, Calif. (US) | ||
| Filed on Sep. 30, 2005, as Appl. No. 11/240,005. | ||
| Prior Publication US 2007/0075427 A1, Apr. 05, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—681 [438/627; 438/648; 438/656; 257/E21.168; 427/249.17] | 10 Claims |
| 1. A method for forming an integrated circuit comprising:
providing a substrate;
providing an organometallic precursor material;
providing at least one doping agent;
providing a plasma;
placing the substrate within a reaction chamber;
performing a process cycle, wherein the process cycle comprises:
pulsing the organometallic precursor material into the reaction chamber;
pulsing the doping agent into the reaction chamber; and
pulsing the plasma into the reaction chamber,
wherein the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form
a metal and carbon containing layer; and
repeating the process cycle until the metal and carbon containing layer is of a sufficient thickness, wherein a number of
organometallic precursor material pulses, a number of doping agent pulses, and a number of plasma pulses are varied in consecutive
process cycles to form a graded concentration of carbon in the metal and carbon containing layer.
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