| US 7,549,225 B2 | ||
| Method of forming a printhead | ||
| Chien-Hua Chen, Corvallis, Oreg. (US); and Charles C Haluzak, Corvallis, Oreg. (US) | ||
| Assigned to Hewlett-Packard Development Company, L.P., Houston, Tex. (US) | ||
| Filed on Jul. 27, 2006, as Appl. No. 11/494,062. | ||
| Application 11/494062 is a division of application No. 10/695147, filed on Oct. 28, 2003, granted, now 7,103,972. | ||
| Application 10/695147 is a division of application No. 10/003600, filed on Oct. 31, 2001, granted, now 6,679,587. | ||
| Prior Publication US 2007/0188551 A1, Aug. 16, 2007 | ||
| Int. Cl. B21D 53/76 (2006.01) | ||
| U.S. Cl. 29—890.1 [29/890.09; 347/63; 216/27] | 17 Claims |
| 1. A method of bonding two semiconductor substrates to form a printhead comprising:
providing a first substrate and a second substrate separate from the first substrate;
aligning a top surface of the first substrate with a bottom surface of the second substrate, wherein the first substrate has
a fluid channel in the top surface;
heating the first and second substrates to a first temperature in a vacuum pressure; and
placing the top surface of the first substrate in contact with the bottom surface of the second substrate while heating the
first and second substrates to the first temperature in the vacuum pressure to form a fusion bond between the top surface
of the first substrate and the bottom surface of the second substrate,
wherein a patterned etch mask layer is formed on at least one of the top surface of the first substrate and the bottom surface
of the second substrate,
wherein the patterned etch mask layer is formed on the top surface of the first substrate and has at least one opening defined
therein, wherein the at least one opening is aligned with the fluid channel in the top surface of the first substrate.
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