| US 7,514,775 B2 | ||
| Stacked structures and methods of fabricating stacked structures | ||
| Clinton Chao, Hsinchu (Taiwan); Tsorng-Dih Yuan, Hsinchu (Taiwan); Hsin-Yu Pan, Taipei (Taiwan); Kim Chen, Fremont, Calif. (US); Mark Shane Peng, Hsinchu (Taiwan); and Tjandra Winata Karta, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Oct. 09, 2006, as Appl. No. 11/539,814. | ||
| Prior Publication US 2008/0083975 A1, Apr. 10, 2008 | ||
| Int. Cl. H01L 23/498 (2006.01) | ||
| U.S. Cl. 257—686 [257/698; 257/706; 257/777; 257/E23.063] | 21 Claims |
| 1. A stacked structure, comprising:
a first die coupled to a first substrate, the first die comprising a first conductive structure formed therethrough;
a second die mounted over the first die, the second die coupled to the first substrate by the first conductive structure,
wherein the second die comprises a scribe line region around a die region and at least one support structure region adjacent
thereto, and the support structure region is between the die region and the scribe line region; and
a heat spreader mounted over the second die.
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