| US 7,514,184 B2 | ||
| Reticle with antistatic coating | ||
| Wei-Yu Su, Taipei (Taiwan); Dong-Hsu Cheng, Tainan (Taiwan); and Li-Kong Turn, Taichung (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Hsin-Chu (Taiwan) | ||
| Filed on Mar. 28, 2005, as Appl. No. 11/92,734. | ||
| Application 11/092734 is a continuation in part of application No. 10/273682, filed on Oct. 18, 2002, granted, now 7,029,800. | ||
| Prior Publication US 2005/0186488 A1, Aug. 25, 2005 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G03F 1/00 (2006.01); G03F 1/14 (2006.01) | ||
| U.S. Cl. 430—5 | 20 Claims |
| 1. A method for forming a static resistant reticle for use in integrated circuit lithographic process comprising:
providing a quartz substrate,
forming a patterning layer placed on the substrate, and forming a film coating of an antistatic conductive material covering the substrate and the patterning layer, wherein the antistatic
conductive material comprises a quaternary amine, said quaternary amine comprises (R4N)+Cl− with M.W. of about 200 to about 500 where R comprises a hydrocarbon,
whereby a shielding effect protecting the reticle by eliminating potential difference on the reticle is attained.
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