US 7,476,291 B2
High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
Ing-Yann Albert Wang, Moraga, Calif. (US); and Robert Chebi, San Carlos, Calif. (US)
Assigned to Lam Research Corporation, Fremont, Calif. (US)
Filed on Sep. 28, 2006, as Appl. No. 11/528,275.
Prior Publication US 2008/0078744 A1, Apr. 03, 2008
Int. Cl. C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/302 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01)
U.S. Cl. 156—345.33  [156/345.35; 156/345.34; 438/689; 216/67] 21 Claims
OG exemplary drawing
 
1. A vacuum chamber comprising:
a chamber top;
a gas distribution member and an external chamber body;
the gas distribution member comprising an internal chamber body configured to be slidably supported on the external chamber body with a gap between outer surfaces of the internal chamber body and inner surfaces of the external chamber body; gas passages extending through a central upper portion of the internal chamber body, the gas passages adapted to direct process gas into the chamber towards the semiconductor substrate; a domed inner surface adapted to overlie the substrate and confine the process gas in a space; and a central upper vacuum sealing surface surrounding the gas passages and adapted to form a vacuum seal with a lower surface of the chamber top;
the external chamber body having a sidewall and an annular recess in an upper portion of the sidewall, slidably supporting the internal chamber body and configured to surround a side of said internal chamber body with a vacuum gap therebetween;
an exhaust unit operative to pump the process gas from said chamber;
the chamber top having a central portion thereof slidably mounted on the central upper portion of said internal chamber body so as to cover a top surface of said internal chamber body with an ambient gap therebetween outward of the central portion and having an opening in fluid communication with said gas passages; and
a plasma source operative to energize process gas and coupled to said opening for fluid communication with said opening in the chamber top.